SI7456DDP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
50
V_GS = 10 V thru 5 V
56
40
Si7456DDP
Vishay Siliconix
42
30
V_GS = 4 V
T_C = 25 °C
28
20
14
0
0
0.05
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
T_C = 125 °C
T_C = - 55 °C
0
0.0
1.5
3.0
4.5
6.0
7.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 7.5 V
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 50 V
6
V_DS = 25 V
4
V_DS = 75 V
1200
900
600
C_iss
C_oss
300
0
0
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 15 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
2
0.8
0
0
4
9
13
18
22
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67869
For technical questions, contact: [e-mail]
www.vishay.com
S12-1261-Rev. A, 21-May-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000