SI7456DDP Datasheet, PDF (2/13 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

Si7456DDP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
V_DS/T_J
V_GS(th)/T_J
I_D = 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 100 V, V_GS = 0 V
V_DS = 100 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 10 A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 7.5 V, I_D = 9 A
V_GS = 4.5 V, I_D = 8 A
Forward Transconductance^a
g_fs
V_DS = 10 V, I_D = 10 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 50 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
V_DS = 50 V, V_GS = 10 V, I_D = 10 A
Q_g
V_DS = 50 V, V_GS = 7.5 V, I_D = 10 A
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current^a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q_gs
Q_gd
Q_oss
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
I_S
I_SM
V_SD
t_rr
Q_rr
t_a
t_b
V_DS = 50 V, V_GS = 4.5 V, I_D = 10 A
V_DS = 50 V, V_GS = 0 V
f = 1 MHz
V_DD = 50 V, R_L = 5 
I_D  10 A, V_GEN = 7.5 V, R_g = 1 
V_DD = 50 V, R_L = 5 
I_D  10 A, V_GEN = 10 V, R_g = 1 
T_C = 25 °C
I_S = 4 A
I_F = 5 A, dI/dt = 100 A/µs, T_J = 25 °C
Min.
Typ.
Max.
Unit
100
V
67
mV/°C
-5
1.5
2.8
V
± 100
nA
1
µA
10
30
A
0.017 0.023
0.018 0.024

0.022 0.031
26
S
900
340
pF
31
19.6
29.5
15
23
9.7
15
nC
2.8
4.3
26.2
40
0.2
0.85
1.7

13
26
14
28
19
38
10
20
ns
11
22
10
20
20
40
9
18
25
A
70
0.77
1.1
V
34
65
ns
34
65
nC
20
ns
14
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67869
2
S12-1261-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000