SI4850EY Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50
0.4
40
0.0
- 0.4
30
I_D = 250 µA
20
- 0.8
10
- 1.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
2
1
Duty Cycle = 0.5
Notes:
P _DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 75 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71146.
www.vishay.com
4
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09