SI4850EY Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4850EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
1400
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1200
C_iss
1000
800
600
400
C_oss
200
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 6.0 V
8
6
V_DS = 30 V
4
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
50
2.2
I_D = 6.0 A
2.0
1.8
V_GS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.06
0.05
T_J = 175 °C
T_J = 25 °C
10
0.04
I_D = 6.0 A
0.03
0.02
0.01
1
0.00
0.5
1.0
1.5
2.0
2.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
www.vishay.com
3