SI4850EY Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4850EY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.022 at V_GS = 10 V
60
0.031 at V_GS = 4.5 V
I_D (A)
8.5
7.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free)
Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
8.5
6.0
7.1
5.0
A
I_DM
40
Avalanche Current
I_AS
15
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
E_AS
11
mJ
T_A = 25 °C
T_A = 70 °C
P_D
3.3
1.7
2.3
1.2
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
36
75
17
Maximum
45
90
20
Unit
°C/W
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
www.vishay.com
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