SI4850EY Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4850EY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V_DS
V_GS(th)
I_GSS
I_DSS
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 6.0 A
V_GS = 10 V, I_D = 6.0 A, T_J = 125 °C
V_GS = 10 V, I_D = 6.0 A, T_J = 175 °C
Forward Transconductance^a
V_GS = 4.5 V, I_D = 5.1 A
g_fs
V_DS = 15 V, I_D = 6.0 A
Diode Forward Voltage^a
V_SD
I_S = 1.7 A, V_GS = 0 V
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 30 V, V_GS = 10 V, I_D = 6.0 A
V_GS = 0.1 V, f = 5 MHz
V_DD = 30 V, R_L = 30 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
I_F = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
60
V
1
3
± 100
nA
1
µA
20
40
A
0.018
0.022
0.031
0.037
Ω
0.039
0.047
0.025
0.031
25
S
0.8
1.2
V
18
27
3.4
nC
5.3
0.5
1.4
2.4
Ω
10
20
10
20
25
50
ns
12
24
50
80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
V_GS = 10 V thru 5 V
32
32
24
24
4V
16
16
8
8
3V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
www.vishay.com
2
T_C = 150 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09