BUF654 Datasheet, PDF (6/9 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF654
10
saturated switching
8
R-load
I_C = 2A, I_B1 = 0.4A
6
T_j = 125°C
4
T_j = 25°C
2
0
0
1
2
3
4
95 9749
–I_B2 / I_B1
Figure 10. t_s vs. –I_B2/I_B1
5
4
T_j = 125°C
3
T_j = 25°C
2
saturated switching
1 ^L-load
I_C = 2A, I_B1 = 0.4A
0
0
1
2
3
4
95 9748
–I_B2 / I_B1
Figure 11. t_s vs. –I_B2/I_B1
10
8 _{Tj = 125°C}
6
saturated switching
R-load
I_C = 5A, I_B1 = 1A
4
T_j = 25°C
2
0
0
1
2
3
4
95 9760
–I_B2 / I_B1
Figure 12. t_s vs. –I_B2/I_B1
6 (9)
1.0
saturated switching
0.8
R-load
I_C = 2A, I_B1 = 0.4A
0.6
T_j = 125°C
0.4
0.2
T_j = 25°C
0
0
1
2
3
4
95 9762
–I_B2 / I_B1
Figure 13. t_f vs. –I_B2/I_B1
0.5
saturated switching
L-load
0.4 _{IC = 2A, IB1 = 0.4A}
0.3
T_j = 125°C
0.2
T_j = 25°C
0.1
0
0
1
2
3
4
95 9761
–I_B2 / I_B1
Figure 14. t_f vs. –I_B2/I_B1
1.0
T_j = 125°C
0.8
0.6
saturated switching
R-load
I_C = 5A, I_B1 = 1A
0.4
0.2
T_j = 25°C
0
0
1
2
3
4
95 9764
–I_B2 / I_B1
Figure 15. t_f vs. –I_B2/I_B1
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97