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| BUF654 Datasheet, PDF (2/9 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor | |||
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BUF654
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
DC forward current transfer ratio
Collector-emitter working
voltage
Dynamic saturation voltage
Gain bandwidth product
VCE = 700 V
VCE = 700 V; Tcase = 150°C
IC = 500 mA; L = 125 mH;
Imeasure = 100 mA
IE = 1 mA
IC = 2 A; IB = 0.5 A
IC = 6 A; IB = 2 A
IC = 2 A; IB = 0.5 A
IC = 6 A; IB = 2 A
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 6 A
VCE = 5 V; IC = 12 A
VS = 50 V; L = 1 mH;
Tcase = 125°C;
IC = 5 A; IB1 = 1 A;
âIB2 = 2.5 A; âVBB = 5 V
IC = 6 A; IB = 2 A; t = 1 ms
IC = 6 A; IB = 2 A; t = 3 ms
IC = 500 mA; VCE = 10 V;
f = 1 MHz
Symbol Min Typ Max Unit
ICES
50 mA
ICES
0.5 mA
V(BR)CEO 400
V
V(BR)EBO 9
V
VCEsat
0.1 0.2 V
VCEsat
0.2 0.4 V
VBEsat
0.9 1
V
VBEsat
1 1.2 V
hFE
15
hFE
15
hFE
7
hFE
4
VCEW 500
V
VCEsatdyn
VCEsatdyn
fT
7.5 15 V
1.5 4
V
8
MHz
2 (9)
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97
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