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| BUF654 Datasheet, PDF (3/9 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor | |||
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BUF654
Switching Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time
Storage time
IC = 2 A; IB1 = 0.5 A;âIB2 = 1 A;
VS = 250 V
ton
0.15 0.25 ms
ts
2.2
3
ms
Fall time
tf
0.3 0.4 ms
Turn on time
IC = 5 A; IB1 = 1 A;âIB2 = 2.5 A;
ton
0.3
ms
Storage time
VS = 250 V
ts
1.3
ms
Fall time
tf
0.12
ms
Turn on time
IC = 6 A; IB1 = 1.2 A; âIB2 = 3 A;
ton
Storage time
VS = 250 V
ts
0.5 0.7 ms
1.2 1.5 ms
Fall time
tf
0.1 0.15 ms
Inductive load (figure 3)
Storage time
Fall time
Storage time
Fall time
Storage time
Fall time
Vclamp = 300 V; L = 200 mH; âVBE = 5 V;
ts
IC = 2 A; IB1 = 0.5 A; âIB2 = 1 A
tf
Vclamp = 300 V; L = 200 mH; âVBE = 5 V;
ts
IC = 5 A; IB1 = 1 A; âIB2 = 2.5 A
tf
Vclamp = 300 V; L = 200 mH; âVBE = 5 V;
ts
IC = 6 A; IB1 = 1.2 A; âIB2 = 3 A
tf
2.3
3
ms
0.1 0.2 ms
1.5
2
ms
0.1 0.18 ms
1.1 1.5 ms
0.05 0.1 ms
94 8863
+ VS2 10 V
3 Pulses
tp
+T
0.1
+tp 10 ms
w IB
IC
5
IC
IC LC
+ VS1
0 to
30
V+
VCE
V(BR)CEO
I(BR)R
100 mW
Figure 1. Test circuit for V(BR)CE0
Imeasure
V(BR)CEO
TELEFUNKEN Semiconductors
3 (9)
Rev. D2, 18-Jul-97
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