BUF654 Datasheet, PDF (5/9 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF654
Typical Characteristics (T_case = 25_C unless otherwise specified)
14
12
10
8
0.1 x I_C < I_B2 < 0.5 x I_C
6
V_CEsat < 2 V
4
2
0
0
95 10572
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
Figure 4. V_CEW – Diagram
100
1.56 K/W
10
12.5 K/W
1
25 K/W
0.1
50 K/W
0.01
R_thJA = 85 K/W
0.001
0
95 10509
25 50 75 100 125 150
T_case ( °C )
Figure 7. P_tot vs.T_case
10
T_j = 25°C
8
6
I_B = 1A
600 mA
400 mA
4
2
0
0
95 9747
200 mA
100 mA
50 mA
2
4
6
8
10
V_CE - Collector Emitter Voltage (V)
Figure 5. I_C vs. V_CE
100
V_CE = 5V
V_CE = 10V
10
V_CE = 2V
10
1
I_C = 0.5A 2A
5A 8A
0.1
0.01 ^{Tj = 25°C}
0.01
0.1
1
10
95 9746
I_B - Base Current (A)
Figure 8. V_CEsat vs. I_B
100
T_j = 125°C
T_j = 25°C
T_j = –25°C
10
T_j = 25°C
1
0.01
0.1
1
10
100
94 9217
I_C – Collector Current (A)
Figure 6. h_FE vs. I_C
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97
1
0.01
0.1
1
10
100
94 9206
I_C – Collector Current (A)
Figure 9. h_FE vs. I_C
5 (9)