English
Language : 

BUF653 Datasheet, PDF (6/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor
◁
BUF653
10
saturated switching
8
R-load
IC = 1.8A, IB1 = 0.25A
6
4
Tcase = 125°C
2
Tcase = 25°C
0
0
1
2
3
4
5
6
13682
–IB2/IB1
Figure 10. ts vs. –IB2/IB1
10
saturated switching
8
R-load
IC = 1.8A, IB1 = 0.45A
6
4
2
0
0
13684
Tcase = 125°C
Tcase = 25°C
1
2
3
4
–IB2/IB1
Figure 11. ts vs. –IB2/IB1
0.5
saturated switching
0.4
R-load
IC = 1.8A, IB1 = 0.25A
0.3
Tcase = 125°C
0.2
0.1
Tcase = 25°C
0
0
1
2
3
4
5
6
13683
–IB2/IB1
Figure 12. tf vs. –IB2/IB1
0.6
saturated switching
0.5 R-load
IC = 1.8A, IB1 = 0.45A
0.4
Tcase = 125°C
0.3
0.2
0.1
Tcase = 25°C
0
0
1
2
3
4
13685
–IB2/IB1
Figure 13. tf vs. –IB2/IB1
6 (8)
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
 ▷