BUF653 Datasheet, PDF (5/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF653
Typical Characteristics (T_case = 25_C unless otherwise specified)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
13676
0.1 x I_C < I_B2 < 0.5 x I_C
V_CEsat < 2 V
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
100.00
10.00
1.78K/W
12.5K/W
1.00
0.10
0.01
0
13677
25K/W
50K/W
R_thJA=85K/W
25 50 75 100 125 150
T_case – Case Temperature ( °C )
Figure 4. V_CEW – Diagram
Figure 7. P_tot vs.T_case
10
9
8
7
6
5
4
3
2
1
0
0
13678
1A
0.8A
0.6A
0.4A
0.2A
I_B=0.1A
1 2 3 4 5 6 7 8 9 10
V_CE – Collector Emitter Voltage ( V )
Figure 5. I_C vs. V_CE
10.00
I_C=1A ^{2A 4A 6A} 8A
1.00
0.10
0.01
0.01
13679
0.10
1.00
I_B – Base Current ( A )
Figure 8. V_CEsat vs. I_B
10.00
100
100
T_j = 125°C
10
13680
1
0.01
10V
5V
V_CE=2V
0.10
1.00
10.00
I_C – Collector Current ( A )
Figure 6. h_FE vs. I_C
100.00
75°C
10
25°C
V_CE=2V
1
0.01
0.10
1.00
10.00
13681
I_C – Collector Current ( A )
Figure 9. h_FE vs. I_C
100.00
TELEFUNKEN Semiconductors
5 (8)
Rev. A3, 18-Jul-97