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BUF653 Datasheet, PDF (2/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor
BUF653
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
DC forward current transfer ratio
Collector-emitter working voltage
Dynamic saturation voltage
Gain bandwidth product
VCE = 700 V
VCE = 700 V; Tcase = 150°C
IC = 300 mA; L = 125 mH;
Imeasure = 100 mA
IE = 1 mA
IC = 1.8 A; IB = 0.5 A
IC = 5.5 A; IB = 1.8 A
IC = 1.8 A; IB = 0.5 A
IC = 5.5 A; IB = 1.8 A
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 1.8 A
VCE = 2 V; IC = 5.5 A
VCE = 5 V; IC = 11 A
VS = 50 V; L = 1 mH; IC = 11 A;
IB1 = 3.7 A; –IB2 = 1.1 A;
–VBB = 5 V
IC = 5.5 A; IB = 1.1 A; t = 1 ms
IC = 5.5 A; IB = 1.1 A; t = 3 ms
IC = 500 mA; VCE = 10 V;
f = 1 MHz
Symbol Min Typ Max Unit
ICES
50 mA
ICES
0.5 mA
V(BR)CEO 400
V
V(BR)EBO 11
V
VCEsat
0.2 0.3 V
VCEsat
0.4 0.6 V
VBEsat
0.9 1.1 V
VBEsat
1.1 1.2 V
hFE
15 25
hFE
15 25
hFE
6 10
hFE
4
VCEW 500
V
VCEsatdyn
VCEsatdyn
fT
4
8 13 V
2 3V
MHz
2 (8)
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97