BUF653 Datasheet, PDF (3/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF653
Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time
Storage time
Fall time
Turn on time
Storage time
Fall time
I_C = 1.8 A; I_B1 = 0.5 A; –I_B2 = 0.9 A;
t_on
V_S = 250 V
t_s
t_f
I_C = 5.5 A; I_B1 = 1.1 A; –I_B2 = 2.8 A;
t_on
V_S = 250 V
t_s
t_f
0.15 0.25
ms
2.9
3.6
ms
0.3
0.4
ms
0.5
0.7
ms
1.3
1.7
ms
0.1
0.15
ms
Inductive load (figure 3)
Storage time
Fall time
Storage time
Fall time
I_C = 1.8 A; I_B1 = 0.5 A; –I_B2 = 0.9 A;
t_s
V_clamp = 300 V; L = 200 mH
t_f
I_C = 5.5 A; I_B1 = 1.1 A; –I_B2 = 2.8 A;
t_s
V_clamp = 300 V; L = 200 mH
t_f
3
3.8
ms
0.1
0.2
ms
1.4
1.8
ms
0.06 0.1
ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
TELEFUNKEN Semiconductors
3 (8)
Rev. A3, 18-Jul-97