BUF650 Datasheet, PDF (5/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF650
Typical Characteristics (T_case = 25_C unless otherwise specified)
12
10
8
6
4 ^{0.1 x IC < IB2 < 0.5 x IC}
V_CESat < 2V
2
100
1.78 K/W
10
12.5 K/W
1
25 K/W
0.1
50 K/W
R_thJA = 85 K/W
0.01
0
0
95 10562
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
Figure 4. V_CEW – Diagram
0.001
0
95 10563
25 50 75 100 125 150
T_case ( °C )
Figure 7. P_tot vs.T_case
10
1000mA
8
780mA
580mA
400mA
6
4
2
0
0
95 10566
190mA
95mA
I_B = 49mA
4
8
12
16
20
V_CE – Collector Emitter Voltage ( V )
Figure 5. I_C vs. V_CE
10
I_C = 1A _{2A 4A}
1
0.1
8A
6A
0.01
0.01
95 10567
0.1
1
10
I_B – Base Current ( A )
Figure 8. V_CEsat vs. I_B
100
10V
10
5V
V_CE = 2V
100
125°C
25°C
T_j = 75°C
10
1
0.01
0.1
1
10
100
95 10564
I_C – Collector Current ( A )
Figure 6. h_FE vs. I_C
1
0.01
0.1
1
10
100
95 10565
I_C – Collector Current ( A )
Figure 9. h_FE vs. I_C
TELEFUNKEN Semiconductors
5 (8)
Rev. C2, 18-Jul-97