BUF650 Datasheet, PDF (1/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF650
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
T_case = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T_case ≤ 25°C
Maximum Thermal Resistance
T_case = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
Value
Unit
V_CEO
400
V
V_CEW
500
V
V_CES
700
V
V_EBO
9
V
I_C
10
A
I_CM
15
A
I_B
5
A
I_BM
7.5
A
P_tot
70
W
T_j
150
°C
T_stg
–65 to +150
°C
Symbol
R_thJC
Value
1.78
Unit
K/W
TELEFUNKEN Semiconductors
1 (8)
Rev. C2, 18-Jul-97