BUF650 Datasheet, PDF(2/8 Page) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

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BUF650 Datasheet, PDF (2/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

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BUF650

Electrical Characteristics

Tcase = 25Â°C, unless otherwise specified

Parameter

Test Conditions

Collector cut-off current

Collector-emitter breakdown

voltage (figure 1)

Emitter-base breakdown voltage

Collector-emitter saturation

voltage

Base-emitter saturation voltage

DC forward current transfer ratio

Collector-emitter working voltage

Dynamic saturation voltage

Gain bandwidth product

VCE = 700 V

VCE = 700 V; Tcase = 150Â°C

IC = 300 mA; L = 125 mH;

Imeasure = 100 mA

IE = 1 mA

IC = 1.6 A; IB = 0.4 A

IC = 5 A; IB = 1.6 A

IC = 1.6 A; IB = 0.4 A

IC = 5 A; IB = 1.6 A

VCE = 2 V; IC = 10 mA

VCE = 2 V; IC = 1.6 A

VCE = 2 V; IC = 5 A

VCE = 5 V; IC = 10 A

VS = 50 V; L = 1 mH; IC = 10 A;

IB1 = 3.3 A; âIB2 = 1 A;

âVBB = 5 V

IC = 5 A; IB = 1 A, t = 1 ms

IC = 5 A; IB = 1 A, t = 3 ms

IC = 500 mA; VCE = 10 V;

f = 1 MHz

Symbol Min Typ Max Unit

ICES

50 mA

ICES

0.5 mA

V(BR)CEO 400

V(BR)EBO 9

VCEsat

0.1 0.2 V

VCEsat

0.2 0.4 V

VBEsat

0.9 1 V

VBEsat

1 1.2 V

hFE

VCEW 500

VCEsatdyn

5.5 10 V

1.5 2.5 V

MHz

2 (8)

TELEFUNKEN Semiconductors

Rev. C2, 18-Jul-97

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