BUF650 Datasheet, PDF (3/8 Pages) TEMIC Semiconductors – Silicon NPN High Voltage Switching Transistor

BUF650
Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time
Storage time
Fall time
Turn on time
Storage time
Fall time
I_C = 1.6 A; I_B1 = 0.4 A; –I_B2 = 0.8 A;
t_on
V_S = 250 V
t_s
t_f
I_C = 5 A; I_B1 = 1 A; –I_B2 = 2.5 A;
t_on
V_S = 250 V
t_s
t_f
0.15 0.25
ms
2.2
3
ms
0.3
0.4
ms
0.4
0.6
ms
1.2
1.5
ms
0.1
0.15
ms
Inductive load (figure 3)
Storage time
Fall time
Storage time
Fall time
I_C = 1.6 A; I_B1 = 0.4 A; –I_B2 = 0.8 A;
t_s
V_clamp = 300 V; L = 200 mH
t_f
I_C = 5 A; I_B1 = 1 A; –I_B2 = 2.5 A;
t_s
V_clamp = 300 V; L = 200 mH
t_f
2.2
3
ms
0.15 0.25
ms
1.1
1.5
ms
0.05 0.15
ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
TELEFUNKEN Semiconductors
3 (8)
Rev. C2, 18-Jul-97