SI9947DY Datasheet, PDF (4/4 Pages) TEMIC Semiconductors – Dual P-Channel Enhancement-Mode MOSFET

Si9947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
On-Resistance vs. Gate-to-Source Voltage
0.32
0.28
0.24
T_J = 25_C
0.20
0.16
I_D = 3.5 A
0.12
0.08
0.04
1
0
0.5
1.0
1.5
2.0
V_SD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
1.0
I_D = 250 mA
0.5
Single Pulse Power
25
20
15
0.0
10
–0.5
5
–1
–50
0
50
100
150
T_J – Temperature (_C)
0
10^–2
10^–1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Siliconix
S-47958—Rev. F, 15-Apr-96