SI9947DY Datasheet, PDF (3/4 Pages) TEMIC Semiconductors – Dual P-Channel Enhancement-Mode MOSFET

Si9947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
10
V_GS = 10, 9, 8, 7, 6, 5 V
8
4V
Transfer Characteristics
10
8
6
6
4
2
0
0
0.32
3V
2V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
4
T_C = 125_C
2
25_C
–55_C
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Capacitance
2000
0.24
1500
0.16
V_GS = 4.5 V
V_GS = 10 V
0.08
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
10
V_DS = 10 V
I_D = 3.5 A
8
6
4
2
0
0
2
4
6
8 10 12 14
Q_g – Total Gate Charge (nC)
Siliconix
S-47958—Rev. F, 15-Apr-96
1000
C_iss
500
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 10 V
I_D = 3.5 A
1.2
1.0
0.8
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
3