SI9947DY Datasheet, PDF (1/4 Pages) TEMIC Semiconductors – Dual P-Channel Enhancement-Mode MOSFET

Si9947DY
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
V_DS (V)
r_DS(on) (W)
I_D (A)
0.10 @ V_GS = –10 V
"3.5
–20
0.19 @ V_GS = –4.5 V
"2.5
Recommended upgrade: Si4947DY or Si4953DY
Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
S₁
S₂
SO-8
S₁ 1
G₁ 2
S₂ 3
G₂ 4
Top View
8 D₁
7 D₁
6 D₂
5 D₂
G₁
G₂
D₁ D₁
PĆChannel MOSFET
D₂ D₂
PĆChannel MOSFET
Absolute Maximum Ratings (T_A = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
V
"20
"3.5
"2.5
A
"10
–1.7
2.0
W
1.3
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient^a
R_thJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134.
A SPICE Model data sheet is available for this product (FaxBack document #70636).
Siliconix
1
S-47958—Rev. F, 15-Apr-96