SI9947DY Datasheet, PDF (2/4 Pages) TEMIC Semiconductors – Dual P-Channel Enhancement-Mode MOSFET

Si9947DY
Specifications (T_J = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –16 V, V_GS = 0 V
V_DS = –10 V, V_GS = 0 V, T_J = 70_C
V_DS v –5 V, V_GS = –10 V
V_DS v –5 V, V_GS = –4.5 V
V_GS = –10 V, I_D = 3.5 A
V_GS = –4.5 V, I_D = 2 A
V_DS = –15 V, I_D = –3.5 A
I_S = –1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = –10 V, V_GS = –10 V, I_D = –3.5 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –3.5 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Min
–1.0
–14
–2.5
Typ^a Max Unit
V
"100 nA
–1
mA
–5
A
0.10
W
0.19
4.0
S
–0.9 –1.2
V
13
30
2
nC
5
21
40
12
25
12
30
ns
11
20
50
100
2
Siliconix
S-47958—Rev. F, 15-Apr-96