SI9945DY Datasheet, PDF (4/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode MOSFET

Si9945DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
10
T_J = 150_C
T_J = 25_C
0.25
0.20
0.15
I_D = 3.3 A
0.10
0.05
1
0
0.4
0.8
1.2
1.6
2.0
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
1.0
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
200
160
0.5
I_D = 250 mA
120
0.0
80
–0.5
40
–1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.010
0.100
1.0
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
4
Siliconix
S-47958—Rev. G, 15-Apr-96