SI9945DY Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode MOSFET

Si9945DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
20
Transfer Characteristics
20
16
V_GS = 9, 8, 7, 6 V
T_C = –55_C
16
25_C
12
12
5V
8
8
125_C
4
4V
3V
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
4
0
0
1
2
3
4
5
6
7
V_GS – Gate-to-Source Voltage (V)
Capacitance
1000
0.4
800
0.3
V_GS = 4.5 V
0.2
0.1
V_GS = 10 V
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
10
V_DS = 60 V
I_D = 0.4 A
8
600
400
C_iss
200
C_oss
C_rss
0
0
10
20
30
40
50
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 3.3 A
1.6
6
1.2
4
0.8
2
0.4
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
Siliconix
S-47958—Rev. G, 15-Apr-96
0
–50 –25 0 25 50 75 100 125 150
T_J – Junction Temperature (_C)
3