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| SI9945DY Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode MOSFET | |||
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Si9945DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
60
rDS(on) (W)
0.10 @ VGS = 10 V
0.20 @ VGS = 4.5 V
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
ID (A)
"3.3
"2.5
D1 D1
D2 D2
G1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
60
V
"20
"3.3
"2.6
A
10
1.7
2.0
W
1.3
â55 to 150
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70133.
A SPICE Model data sheet is available for this product (FaxBack document #70516).
Siliconix
1
S-47958âRev. G, 15-Apr-96
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