U4090B Datasheet, PDF (18/34 Pages) TEMIC Semiconductors – Monolithic Integrated Feature Phone Circuit

U4090B
Parameters
Test Conditions / Pin Symbol Min
Input resistance
Distortion of DTMF signal
RGT = 27 kW,
w ^{RGT = 15 kW}
I_L 15 mA
V_L = 0 dBm
R_i
60
26
d_D
Gain deviation with current I_L = 15 to 100 mA
DGD
AFS Acousting feedback suppression
Adjustment range of
attenuation
Attenuation of transmit
gain
Attenuation of speaker
amplifier
AFS disable
w I_L 15 mA
w _{IIIRLIINNATLLADDFTR}1_S5===m0130A_m0,AmkAW
w _{IIIRLIINNATLLADDFPR}1_S5===m0130A_m0mkW
w I_L 15 mA
0
DG_T
DG_SA
V_ATAFS 1.5
Supply voltages, Vmic = 25 mV, T_amb = – 10 to + 60°C
V_MP
I_L = 14
RDC =
mA,
68 kW
V_MP
3.1
I_MP = 2 mA
V_MPS
V_M
I_L = 100 mA
RDC = inf.,
w ^{IMP = 0 mA}
IIR_{LMD=C7=10401m3m0AAk,W}
V_MPS
V_M
1.3
V_B
I_B = + 20 mA,
I_L = 0 mA
V_B
Ringing power converter, IMP = 1 mA, IM = 0
Maximum output power V_RING = 20.6 V
P_SA
Threshold of ring
frequency detector
RFDO: low to high
V_RINGON
V_HYST
= V_RINGON - _RINGOFF VHYST
Input impedance
V_RING = 30 V
R_RING
4
Input impedance in speech
mode
f = 300 Hz to 3400 Hz
I_L > 15 mA,
V_RING = 20V + 1.5V_rms
R_RINGSP
150
Logic-level of frequency
detector
Ring detector enable
V_RING = 0 V
V_B = 4 V
V_RING = 25 V
V_RING = 25 V,
RFDO high
V_RFDO
VMPON 1.8
Zener diode voltage
I_RING = 25 mA
V_RINGmax 30.8
Typ Max
180 300
70
130
2
" 0.5
50
45
50
3.3
3.5
6.7
3.3
7
7.6
20
17.5
11.0
5
6
0
VMP
2.0
2.2
33.3
Unit Figure
kW
29
%
29
dB
29
dB
31
dB
31
dB
31
V
31
V
26
V
26
V
26
V
26
mW 30
V
30
kW
30
kW
30
V
30
V
30
V
30
18 (34)
TELEFUNKEN Semiconductors
Preliminary Information
Rev. C1, 28-Oct-96