U4090B Datasheet, PDF (16/34 Pages) TEMIC Semiconductors – Monolithic Integrated Feature Phone Circuit

U4090B
Parameters
Test Conditions / Pin Symbol Min Typ Max
I_L = 10 mA
Distortion at low operating
current
I_M = 300 mA
I_MP = 1 mA
RDC = 68 kW
d_t
5
Vmic = 10 mV
Line loss compensation
Mute suppression
a) MIC muted (microphone
preamplifier
I_L = 100 mA,
RAGA = 20 kW
w I_L 14 mA
Mutx = open
DG_TI
G_TM
– 6.4 – 5.8 – 5.2
60
80
b) TXA muted (second
stage)
IMPSEL = open
G_TTX
60
w Receiving amplifier, IL = 14 mA, RGR = 62 k, unless otherwise specified, VGEN = 300 mV
I_L 14 mA, single
Adjustment range of
receiving gain
ended
differential MUTR =
G_R
–8
–2
+2
+8
GND
Receiving amplification
RGR = 62 kW
differential
RGR = 22 kW
differential
–1
G_R
– 1.75
– 0.25
7.5
w ^{Amplification of DTMF sig-}
nal from DTMF IN to
RECO 1, 2
I_L 14 mA
V_MUTX = V_MP
G_RM
7
10
13
Frequency response
Gain change with current
Gain deviation
Ear protection differential
MUTE suppression
a) RECATT
b) RA2
c) DTMF operation
v Output voltage d 2%
differential
I_L > 14 mA,
f = 300 to 3400 Hz
I_L = 14 to 100 mA
w ^{Tamb = –10 to +60°C}
I_L 14 mA
w ^{VGEN = 11 Vrms}
I_L 14 mA
MUTR = open
V_MUTR = V_MP
V_MUTX = V_MP
I_L = 14 mA
Z_ear = 68 nF + 100 W
DG_RF
DG_R
DG_R
EP
DG_R
60
0.775
" 0.5
" 0.5
" 0.5
2.2
v^{Maximum output current}
d 2%
Z_ear = 100 W
4
w ^{Receiving noise}
Z_ear = 68 nF + 100 W
psophometrically weigthed I_L 14 mA
ni
Output resistance
each output against
GND
Ro
– 80 – 77
10
Line loss compensation
Gain at low operating cur-
rent
RAGA = 20 kW,
I_L = 100 mA
I_L = 10 mA
I_MP = 1 mA
I_M = 300 mA
V_GEN = 560 mV
RDC = 68 kW
DG_RI
– 7.0 – 6.0 – 5.0
G_R
–2
–1
0
Unit
%
dB
dB
dB
dB
dB
dB
dB
dB
dB
Vrms
dB
Vrms
mA
(peak)
dBmp
W
dB
dB
Figure
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16 (34)
TELEFUNKEN Semiconductors
Preliminary Information
Rev. C1, 28-Oct-96