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| U4090B Datasheet, PDF (15/34 Pages) TEMIC Semiconductors – Monolithic Integrated Feature Phone Circuit | |||
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Thermal Resistance
Parameters
Junction ambient SSO44
Symbol
RthJA
U4090B
Value
Unit
70
K/W
Electrical Characteristics
f = 1 kHz, 0 dBm = 775 mVrms, IM = 0.3 mA, IMP = 2 mA, RDC = 130 kW, Tamb = 25°C, RGSA = 560 kW,
Zear = 68 nF + 100 W, ZM = 68 nF, Pin 31 open, VIMPSEL = GND, VMUTX = GND, VMUTR = GND, unless otherwise
specified.
Parameters
DC characteristics
Test Conditions / Pin Symbol Min Typ Max Unit
DC voltage drop over circuit
IL = 2 mA
IL = 14 mA
IL = 60 mA
IL = 100 mA
2.4
VL
4.6
5.0
5.4
7.5
V
8.8
9.4 10.0
Transmission amplifier, IL = 14 mA, VMIC = 2 mV, RGT = 27 kW, unless otherwise specified
Adjustment range of trans-
mit gain
GT
40
45
50
dB
Transmitting amplification
Frequency response
Gain change with current
Gain deviation
RGT = 12 kW
w RGT = 27 kW
IL 14 mA,
f = 300 to 3400 Hz
Pin 31 open
IL = 14 to 100 mA
Tamb = â 10 to + 60
°C
GT
47
39.8
48
49
41.8
dB
DGT
"0.5 dB
DGT
"0.5 dB
DGT
"0.5 dB
CMRR of microphone
amplifier
CMRR 60
80
dB
Input resistance of MIC
amplifier
RGT = 12 kW
RGT = 27 kW
Ri
45
50
75
110
kW
Distortion at line
Maximum output voltage
IL > 14 mA
VL = 700 mVrms
IL > 19 mA
d < 5%
Vmic = 25 mV
CTXA = 1 mF
dt
2
%
VLmax
1.8
3
4.2 dBm
IMPSEL = open
RGT = 12 kW
VMICOmax
â5.2
dBm
Noise at line psophomet-
rically weighted
IL > 14 mA
GT = 48 dB
no
Anti-clipping attack time CTXA = 1 mF
release time
each 3 dB overdrive
â 80 â72 dBmp
0.5
9
ms
Gain at low operating cur-
rent
IL = 10 mA
IMP = 1 mA
RDC = 68 kW
Vmic = 1 mV
IM = 300 mA
GT
40
42.5 dB
Figure
26
28
28
28
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28
28
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28
TELEFUNKEN Semiconductors
Rev. C1, 28-Oct-96
Preliminary Information
15 (34)
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