THN5601SF Datasheet, PDF (6/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601SF
APPLICATION INFORMATION (III)
RF performance at Ts ≤ 60 in common emitter test circuit
Mode of Operation
CW, class-AB
f [MHz]
465
VCE [V]
4.5 (Icq=5mA)
PL [dBm]
27
GP [dB]
C [%]
Fig 13. POUT vs Gp, ηC (Vce=4.5V, Icq=5mA, 465MHz)Fig 14. Pin vs Gp, POUT (Vce=4.5V, Icq=5mA, 465MHz)
R
R1
R=1 kOhm
BJT _NPN
T HN6501U
C
C8
C=1 uF
C
C9
C=1 nF
C
C10
C=470 pF
Port
Vcc
C
C11
C=470 pF
C
C12
C=1 nF
C
C13
C=1 uF
Port
RF_IN
C
C1
C=470 pF
L
L1
L=6.8 nH
C
C2
C=15 pF
L
L5
C
C3
C=15 pF
L
L6
L
L2
BJT _NPN
T HN5601
L
L3
C
C4
C=13 pF
C
C5
C=8 pF
C
C7
C=470 pF
Port
RF_OUT
Note : L5 and L6 are 8Turn/2.0mm, Air Coil Inductors.
L2 is 2 turn/1.0mm, Air Coil Inductors.
L3 is 5 turn/1.0mm, Air Coil Inductors.
C1 ~ C13, L1 : 1608 size
Fig 15. Freq = 465MHZ Test Schematic
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