THN5601SF Datasheet, PDF (4/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601SF
APPLICATION INFORMATION (I)
RF performance at Ts ≤ 60 in common emitter test circuit
Mode of Operation
f [MHz]
VCE [V]
PL [dBm]
CW, class-AB
900
4.8 (Icq=5mA)
26
Note2: When the RF output Power Auto Tunning System is Used
GP [dB]
C [%]
Fig 5. Pin vs Gp, ηC (Vce=4.8V, Icq=5mA, 900MHz) Fig 6. Pin vs Pout, Gp (Vce=4.8V, Icq=5mA, 900MHz)
Vce = 4.8V, Icq = 5mA, PL = 26dBm, 900MHz
Fig 7. Input impedence as function of frequency
Vce = 4.8V, Icq = 5mA, PL = 26dBm, 900MHz
Fig 8. Output impedence as function of frequency
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