THN5601SF Datasheet, PDF (2/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601SF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction
to soldering point
CONDITION
Ts=70 ;note1
* Note 1. Ts is temperature at the soldering point of the collector pin.
VALUE
Unit
250 K/W
QUICK REFERENCE DATA
Mode of Operation
CW, class-AB
f [MHz]
900
VCE [V]
4.8(Icq=5mA)
PL [dBm]
26
GP [dB]
8.0
C [%]
DC CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
BVCBO
BVCEO
BVEBO
IS
hFE
fT
CCB
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
transition frequency
collector capacitance
CONDITION
MIN.
open emitte
20
open base
8
open collector
2.5
10
60
Vce=4.8V, Icc=200mA, f=500MHz 7
Vcb=10V, f=1MHz
MAX.
200
3
UNIT
V
V
V
uA
GHz
pF
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