THN5601SF Datasheet, PDF (1/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601SF
NPN SiGe RF POWER
TRANSISTOR
SOT-23F
DESCRIPTION
The THN5601SF is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-23F SMD package.
The THN5601SF can be used as a driver device or
an output device, depending on the specific app-
lication.
FEATURES
o 4.8 Volt operation
o P1dB 26dBm @f=900MHz
o Power gain 9.0 dB @f=900MHz
APPLICATIONS
o Hand-help radio equipment in common
emitter class-AB operation in 900MHz
communication band.
MARKING : AM1
MAXIMUM RATINGS
SYMBOL
VCBO
VCEO
VEBO
Ic
PT
TSTG
TJ
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Unit : mm
PIN CONFIGURATION
PIN NO SYMBOL
1
b
2
e
3
c
DESCRIPTION
base
emitter
collector
CONDITION
Open Emitter
Open Base
Open Collector
Ts = 60
VALUE
20
8
2.5
250
800
-65 ~ 150
150
UNIT
V
V
V
mA
mW
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