THN6701B Datasheet, PDF (4/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

Preliminary Specification
THN6701B
□ Application Information
RF performance at T_S ≤ 60 ℃ in common emitter configuration
Operation Mode
CW, class-AB
f (MHz)
465
V_CE (V)
6
P_OUT (dBm)
35
G_P (dB)
≥10
η_C (%)
60
Output Power or Power Gain
vs. Input Power
40
18
f = 465 MHz, V = 6 V, I = 50 mA
CC
CQ
35
16
30
G
P
P
OUT
14
25
12
20
10
15
8
10
6
0 5 10 15 20 25 30
Input Power, P (dBm)
IN
Collector Current or Collector Efficiency
vs. Input Power
1.6
80
f = 465 MHz, V = 6 V, I = 50 mA
CC
CQ
1.4
70
1.2
60
1.0
50
η
C
0.8
40
I
0.6
C
30
0.4
20
0.2
10
0.0
0
0
5 10 15 20 25 30
Input Power, P (dBm)
IN
Sept. 2005.
Page 4 of 6
http://www.tachyonics.co.kr
Rev. 1.0