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THN6701B Datasheet, PDF (2/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR
Preliminary Specification
□ Thermal Characteristics
Symbol
Rth j-a
Parameter
Thermal Resistance from Junction to Ambient
THN6701B
Value
Unit
27
K/W
□ Electrical Characteristics (TA = 25 ℃)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Symbol
ICBO
ICEO
IEBO
hFE
Cre
Test Conditions
VCB = 15 V, IE = 0 mA
VCE = 11 V, IB = 0 mA
VEB = 1.0 V, IC = 0 mA
VCE = 6 V, IC = 200 mA
VCB = 6 V, IE = 0 mA, f = 1 MHz
□ hFE Classification
Marking
hFE Value
R6701
40 - 200
R6701·
170 - 300
Min. Typ. Max. Unit
-
-
1.0
㎂
-
-
5.0
㎂
-
-
1.0
㎂
40
-
300
-
6.2
-
pF
Sept. 2005.
Page 2 of 6
http://www.tachyonics.co.kr
Rev. 1.0