THN6701B Datasheet, PDF (3/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

Preliminary Specification
THN6701B
□ Typical Characteristics ( T_A = 25℃, unless otherwise specified)
Collector Current vs.
Base to Emitter Voltage
500
400
V =6V
CE
300
200
100
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, V (V)
BE
Reverse Transfer Capacitance
vs. Collector to Base Voltage
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
0
2
4
6
8
10
Collector to Base Voltage, V (V)
CB
DC Current Gain
vs. Collector Current
150
125
V =6V
CE
100
75
50
25
0
10^-3
10^-2
10^-1
10⁰
Collector Current, I (A)
C
Collector Current
vs. Collector to Emitter Voltage
0.9
0.8
I step = 2 mA
B
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
012345678
Collector to Emitter Voltage, V (V)
CE
Sept. 2005.
Page 3 of 6
http://www.tachyonics.co.kr
Rev. 1.0