THN6701B Datasheet, PDF (1/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

Preliminary Specification
NPN SiGe RF POWER TRANSISTOR
□ Applications
- UHF and VHF wide band amplifier
□ Features
- High power gain
MAG = 15 dB @ V_CE = 6 V, I_C = 400 mA, f = 465 MHz
- High power
P_OUT = 35 dBm(3W) @ V_CE = 6 V, I_CQ = 50 mA, f = 465 MHz
THN6701B
SOT223
Unit in mm
6.5
3.0
4
1
23
2.3
0.7
4.6
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
PIN CONFIGURATION
1. Base
2. Emitter
3. Collector
4. Emitter
Ratings
Unit
17
V
12
V
1.5
V
1
A
4.5
W
150
℃
-65 ~ 150
℃
Sept. 2005.
Page 1 of 6
http://www.tachyonics.co.kr
Rev. 1.0