STE88N65M5 Datasheet, PDF (9/14 Pages) STMicroelectronics – Higher dv/dt capability

STE88N65M5
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
μF
D.U.T.
3.3
μF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
μF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100μH
B
3.3
B
μF
D
G
RG
S
1000
μF
VDD
Vi
L
VD
2200
3.3
μF
μF
VDD
ID
D.U.T.
AM01470v1
Figure 19. Unclamped inductive waveform
V(BR)DSS
VD
Pw
AM01471v1
Figure 20. Switching time waveform
&RQFHSWĆZDYHIRUPĆIRUĆ,QGXFWLYHĆ/RDGĆ7XUQRIIĆ
,G
9GV
,G
VDD
IDM
ID
VDD
9JV
9JV RQ
9GV
9GV
9JV,W
AM01472v1
7GHOD\RII
7ULVH
7IDOO
7FU RVV RYHU
,G
$0Y
DocID025974 Rev 1
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