STE88N65M5 Datasheet, PDF (4/14 Pages) STMicroelectronics – Higher dv/dt capability

Electrical characteristics
2
Electrical characteristics
STE88N65M5
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 650 V
drain current (V_GS = 0) _{VDS = 650 V, TC=125 °C}
Gate-body leakage
current (V_DS = 0)
V_GS = ± 25 V
Gate threshold voltage V_DS = V_GS, I_D = 250 μA
Static drain-source
on- resistance
V_GS = 10 V, I_D = 42 A
Min. Typ. Max. Unit
650
V
1 μA
100 μA
±100 nA
3
4
5V
0.024 0.029 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
- 8825 - pF
- 223 - pF
-
11
- pF
(1)
C_o(tr)
Equivalent
capacitance time
related
V_GS = 0, V_DS = 0 to 520 V
- 778 - pF
Equivalent
(2)
C_o(er) capacitance energy
related
V_GS = 0, V_DS = 0 to 520 V
- 202 - pF
Intrinsic gate
R_{G resistance}
f = 1 MHz open drain
-
1.79
-
Ω
Q_g Total gate charge
V_DD = 520 V, I_D = 42 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 16)
- 204 - nC
-
51
- nC
-
84
- nC
1. C_o(tr) is a constant capacitance value that gives the same charging time as C_oss while V_DS is rising from 0
to 80% V_DSS.
2. C_o(er) is a constant capacitance value that gives the same stored energy as C_oss while V_DS is rising from 0
to 80% V_DSS.
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