STE88N65M5 Datasheet, PDF (3/14 Pages) STMicroelectronics – Higher dv/dt capability

STE88N65M5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
(1)
I_DM Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse avalanche
I_{AR (pulse width limited by TJMAX)}
E_AS
(2)
dv/dt
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50V)
Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 88 A, di/dt = 400 A/μs, V_DD = 400 V, V_{DS (peak)} < V_(BR)DSS.
± 25
88
55.7
352
494
15
2000
15
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
Value
0.253
30
Unit
V
A
A
A
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
DocID025974 Rev 1
3/14
14