STE88N65M5 Datasheet, PDF (7/14 Pages) STMicroelectronics – Higher dv/dt capability

STE88N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
14
VDS
12
10
VDD=520V
ID=42A
AM10395v1
VDS (V)
500
400
8
300
6
200
4
100
2
0
0
0
50 100 150 200 Qg(nC)
Figure 9. Capacitance variations
C
(pF)
AM10397v1
100000
10000
Ciss
1000
100
Coss
10
1
0.1
1
Crss
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
I_D= 250µA
AM08899v1
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
1.9
1.7
ID= 42 A
VGS= 10 V
AM05501v2
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
TJ=-50°C
1.2
AM04974v1
1.0
0.8
0.6
TJ=150°C
0.4
TJ=25°C
0.2
0
0 10 20 30 40 50 ISD(A)
Figure 13. Output capacitance stored energy
Eoss
(µJ)
40
35
30
25
20
15
10
5
0
0
AM10398v1
100 200 300 400 500 600 VDS(V)
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