STD3NM60T4 Datasheet, PDF (9/17 Pages) STMicroelectronics – N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

STD3NM60, STD3NM60-1, STP4NM60
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
RL
2200
3.3
µF
µF _VDD
IG=CONST
VD
Vi=20V=VGMAX
100Ω
D.U.T.
VGS
RG
t(s) ^PW
D.U.T.
2200
µF
2.7kΩ
VG
47kΩ
uc _PW
rod ^AM01468v1
1kΩ
AM01469v1
P _{Figure 17. Test circuit for inductive load}
Figure 18. Unclamped inductive load test
te ^{switching and diode recovery times}
circuit
Obsole _G
t(s) ^{- 25Ω}
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
uc ^RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
rod _Pw
P _AM01470v1
lete ^{Figure 19. Unclamped inductive waveform}
Figure 20. Switching time waveform
AM01471v1
bso V(BR)DSS
O _VD
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
Doc ID 8370 Rev 4
9/17