STD3NM60T4 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

STP4NM60
STD3NM60, STD3NM60-1
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK
Zener-protected MDmesh™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
(@T_jmax) max
I_D
) STD3NM60
t(s ^{STD3NM60-1 650}
3A
< 1.5 Ω
c _STP4NM60
4A
P_W
42 W
69 W
rodu _{■ High dv/dt and avalanche capabilities}
te ^{P ■ Improved ESD capability}
le ^{■ Low input capacitance and gate charge}
o _{■ Low gate input resistance}
bs ■ Tight process control and high manufacturing
O ^yields
t(s) ^{- Applications}
c ^{■ Switching}
rodu ^Description
P _{Modems technology applies the benefits of the}
te ^{multiple drain process to STMicroelectronics' well-}
known PowerMESH™ horizontal layout structure.
le _{The resulting product offers low on-resistance,}
so ^{high dv/dt capability and excellent avalanche}
Ob^{characteristics.}
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
Package
Packing
STD3NM60
D3NM60
DPAK
Tape and reel
STD3NM60-1
D3NM60
IPAK
Tube
STP4NM60
P4NM60
TO-220
Tube
September 2009
Doc ID 8370 Rev 4
1/17
www.st.com
17