STD3NM60T4 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD3NM60, STD3NM60-1, STP4NM60
(T_CASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 250 µA, V_GS =0
600
V
Zero gate voltage
V_DS = max rating
1
µA
) ^IDSS
drain current (V_GS = 0)
V_DS = max rating,
T_C = 125°C
ct(s ^IGSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20V
du ^VGS(th) ^{Gate threshold voltage V}DS ^{= V}GS^{, I}D ^{= 250µA}
3
Pro ^RDS(on)
Static drain-source on
resistance
V_GS = 10 V, I_D = 1.5 A
10
µA
±5
µA
4
5
V
1.3
1.5
Ω
lete Table 6. Dynamic
so Symbol
Parameter
Ob g_fs ⁽¹⁾
t(s) ^{- Ciss}
C_oss
uc ^Crss
rod ^td(on)
P^tr
t_d(off)
te_tf
ole ^Qg
s _Qgs
Ob ^Qgd
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min. Typ. Max. Unit
V_DS = 15 V _, I_D = 1.5 A
-
2.7
-
S
324
pF
V_DS = 25 V, f = 1 MHz,
-
132
-
pF
V_GS = 0
7.4
pF
9
ns
V_DD = 300 V, I_D = 1.5 A
4
ns
R_G = 4.7 Ω V_GS = 10 V
(see Figure 15)
-
16.5
-
ns
10.5
ns
V_DD = 480 V, I_D = 3 A,
10
14
nC
V_GS = 10V
-
3
nC
(see Figure 21)
4.7
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
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