STD3NM60T4 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET

STD3NM60, STD3NM60-1, STP4NM60
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
STP4NM60
STD3NM60
STD3NM60-1
V_DS Drain-source voltage (V_GS= 0)
600
V
V_GS Gate- source Voltage
± 30
V
I_D
t(s) ^ID
c ^IDM ⁽¹⁾
u _PTOT
Prod _dv/dt ⁽²⁾
Drain current (continuous) at T_C= 25°C
Drain current (continuous) at T_C= 100°C
Drain current (pulsed)
Total dissipation at T_C= 25°C
Derating factor
Peak diode recovery voltage slope
te T_j
Operating junction temperature
le _{Tstg Storage temperature}
so _{1. Pulse width limited by safe operating area}
b _{2. ISD ≤3 A, di/dt ≤400 µA, VDD ≤V(BR)DSS, Tj ≤TJMAX.}
t(s) ^{- O Table 3. Thermal data}
uc _Symbol
Parameter
rod _{Rthj-case Thermal resistance junction-case max}
te ^{P Rthj-amb Thermal resistance junction-ambient max}
Obsole ^Tl
Maximum lead temperature for soldering
purpose
4
3
2.52
1.9
16
12
69
42
0.55
0.33
15
-65 to 150
A
A
A
W
W/°C
V/ns
°C
°C
Value
Unit
To-220
DPAK / IPAK
1.82
3
62.5
°C/W
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not-repetitive (pulse
width limited by T_jmax)
1.5
A
Single pulse avalanche energy
E_AS
(starting T_j= 25 °C, I_D= I_AR, V_DD= 50 V)
200
mJ
Doc ID 8370 Rev 4
3/17