STB200N6F3 Datasheet, PDF (9/16 Pages) STMicroelectronics – N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET

STB200N6F3, STI200N6F3, STP200N6F3
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
µF
D.U.T.
3.3
µF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS
VD
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
Doc ID 15606 Rev 2
9/16