STB200N6F3 Datasheet, PDF (8/16 Pages) STMicroelectronics – N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET

Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
VSD
(V)
0.9
TJ=-55°C
0.8
0.7
AM05524v1
TJ=25°C
0.6
TJ=175°C
0.5
0.4
0.3
0 10 20 30 40 50
ISD(A)
STB200N6F3, STI200N6F3, STP200N6F3
8/16
Doc ID 15606 Rev 2