STB200N6F3 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB200N6F3, STI200N6F3, STP200N6F3
(T_CASE=25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS= 0
60
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS= max rating,
V_DS= max rating,@125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 60 A
D²PAK
TO-220, I²PAK
Typ.
3
3.3
Max.
10
100
±200
4
3.5
3.8
Unit
V
µA
µA
nA
V
mΩ
mΩ
Table 5.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V_DS = 25 V, f = 1MHz,
V_GS = 0
V_DD = 30 V, I_D = 60 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 15,
Figure 20)
V_DD = 30 V, I_D = 120 A,
V_GS = 10 V,
(see Figure 16)
Min. Typ. Max. Unit
6265
pF
- 1295 -
pF
43
pF
26
ns
75
ns
-
-
86
ns
14
ns
101
nC
-
36
-
nC
25.2
nC
4/16
Doc ID 15606 Rev 2