STB200N6F3 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET

STB200N6F3, STI200N6F3, STP200N6F3
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=120 A, V_GS=0
I_SD=120 A,
di/dt = 100 A/µs,
V_DD=48 V, Tj=150 °C
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
120 A
-
480 A
-
1.5
V
67
ns
-
177.6
nC
5.3
A
Doc ID 15606 Rev 2
5/16