STB100NF04_07 Datasheet, PDF (9/17 Pages) STMicroelectronics – N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

STB100NF04 - STP100NF04
Figure 17. Allowable Iav vs. Time in Avalanche
Electrical characteristics
The previous curve give the safe operating area for unclamped inductive loads, single pulse
or repetitive, under the following conditions:
P_D(AVE) = 0.5*(1.3*BV_DSS*I_AV)
E_AS(AR) = P_D(AVE) * t_AV
Where:
I_AV is the Allowable Current in Avalanche
P_D(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
t_AV is the Time in Avalanche
To de rate above 25°C, at fixed I_AV, the following equation must be applied:
I_AV=2*(T_jmax - T_CASE) / (1.3*BV_DSS * Z_th)
Where:
Z_th= K*R_th is the value coming from Normalized Thermal Response at fixed pulse width
equal to T_AV
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