STB100NF04_07 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

STB100NF04 - STP100NF04
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source Voltage (V_GS=0)
V_GS
I_D(1)
I_D ⁽¹⁾
I_DM(2)
Gate-source Voltage
Drain-current (continuous) at Tc=25°C
Drain-current (continuous) at Tc=100°C
Drain-current (pulsed)
P_TOT Total dissipation at Tc=25°C
Derating factor
dv/dt⁽³⁾ Peak Diode Recovery voltage slope
E_AS(4) Single Pulse Avalanche Energy
T_j
Operating Junction Temperature
T_stg Storage Temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I_SD ≤120A, di/dt ≤300A/µs, V_DD < V_(BR)DSS. Tj < Tjmax
4. Starting Tj=25°C, I_D=60A, V_DD=30V
Value
40
±20
120
120
480
300
2
6
1.2
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-pcb
Rthj-amb
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-ambient (Free Air) Max
Maximum Lead Temperature For Soldering Purpose
Value
0.5
(see Figure 13)
62.5
300
Unit
°C/W
°C/W
°C/W
°C
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